3DGBGS: 3D Granular Ball Gaussian Splatting for Compact Novel View Synthesis

Three-dimensional Gaussian Splatting (3DGS) enables high-quality real-time novel-view synthesis through explicit Gaussian primitives and differentiable rasterization. 3DGS and Granular Ball Computing (GBC), proposed in 2019, share a natural compatibility in adaptive representation. The efficiency of 3DGS partly stems from a coarse-to-fine and on-demand refinement process that draws on the generation principle of GBC. This connection motivates us to further introduce adaptive granular ball organization into anchor-based 3DGS. Existing anchor-based methods typically construct anchors from sparse SfM point clouds through fixed voxelization, which cannot adequately adapt to spatially non-uniform point distributions and leads to a trade-off among anchor count, model compactness, and rendering quality. To address this issue, we propose 3DGBGS (3D Granular Ball Gaussian Splatting), a compact anchor-based framework for novel-view synthesis. 3DGBGS adaptively partitions SfM point clouds into 3D granular balls, using larger balls to compactly represent smooth and redundant regions and smaller balls to preserve complex geometry and local details. Based on this representation, Granular Ball Anchor Initialization (GBAI) uses granular ball centers to initialize compact anchor positions, while the Granular Ball Scale Prior (GBSP) exploits granular ball radii to provide local scale priors for Gaussian generation. Experiments on four benchmarks show that 3DGBGS reduces initial and final anchors by 37.1% and 10.0%, respectively, and model storage by 9.8% on average, while maintaining comparable rendering quality.

Rapid FinFET Modelling Using an Autoencoder

This work presents a machine learning framework that leverages an autoencoder (AE) for the efficient modeling of FinFET. We first calibrated a BSIM-CMG model to generate a dataset of current-voltage (ID-VG) characteristics. This data was used to train an autoencoder that compresses full I-V curves into a low-dimensional latent space, which intrinsically encodes key device physics. A key innovation is the explicit incorporation of parameter such as drain to source voltage (VDS) as an input feature, enhancing the model ability to capture bias dependent variation. The trained model successfully reconstructs full I-V curves and directly extracts critical device metrics including threshold voltage (VTH), subthreshold slope (SS), and peak transconductance (gm). This approach demonstrates that data driven compact models, built from actual characterization data, can achieve high accuracy with minimal training data, providing a powerful tool for rapid device characterization, modelling and circuit level simulation.